Product
0
ISC015N06NM5
  • ISC015N06NM5

ISC015N06NM5

Active and preferred

OptiMOS™ 5 switching‑optimized power MOSFET in 60 V in PQFN 5x6 drain‑down package delivers low RDS(on), reduced switching losses and strong thermal performance for AI, Datacenter & Telecom power conversion. The drain‑down DSC 5x6 package enables high current density and compact power architectures, meeting efficiency, transient and reliability targets for GPU/accelerator rails in dense data‑center servers.

Infineon Technologies ISC015N06NM5 Product Info

16 April 2026 0

Parameters

ID (@25°C) max

259 A

IDpuls max

1036 A

Operating Temperature range

-55 °C to 175 °C

Package

SuperSO8 5x6

Polarity

N

Ptot max

188 W

QG (typ @10V)

70 nC

RDS (on) (@10V) max

1.5 mΩ

VDS max

60 V

VGS(th) range

2.1 V to 3.3 V

VGS(th)

2.8 V

Apps

Data center power solutions, Server power supply units (PSU), Medium voltage IBC (48 V), Telecommunications infrastructure, Power conversion

Features

  • Low RDS(on), optimized switching losses
  • Low inductance for fast switching
  • Low-voltage overshoot
  • Optimized for advanced AI topologies
  • Low Qg/Qoss for high frequency
  • PQFN 5x6, dual-side cooled package

Description

  • Ease of use
  • Highest system efficiency
  • Low conduction & switching losses
  • Higher conversion efficiency, less heat
  • Benchmark reliabiltiy
  • Increased power density

Subscribe to Welllinkchips !
Your Name
* Email
Popular Posts
Featured Parts More >
Submit a request
CONTACT US
Company address

WELL LINK CHIPS GROUP CO.,LIMITED FLAT/RM 1802 BEVERLY HOUSE 93-107 LOCKHART ROAD WANCHAI HK

Send Enquiry
SEND e-MAIL
Office hour from 9am to 6pm ,
Monday through Friday, UTC/GMT +8