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ISC011N06LM5
  • ISC011N06LM5

ISC011N06LM5

Active and preferred

The ISC011N06LM5, Infineon's OptiMOS™ MOSFET in the SuperSO8 package extends the OptiMOS™ 5 and 3 product portfolio and enables higher power density in addition to improved robustness, responding to the need for lower system cost and increased performance. Low reverse recovery charge (Qrr) improves the system reliability by providing a significant reduction of voltage overshoot, which minimizes the need for snubber circuits, resulting in less engineering cost and effort.

Infineon Technologies ISC011N06LM5 Product Info

16 April 2026 0

Parameters

Budgetary Price €/1k

1.42

ID (@25°C) max

295 A

Operating Temperature range

-55 °C to 175 °C

Package

SuperSO8 5x6

Polarity

N

QG (typ @10V)

127 nC

QG (typ @4.5V)

63 nC

RDS (on) (@10V) max

1.15 mΩ

RDS (on) (@4.5V) max

1.45 mΩ

Special Features

Logic Level, Fused leads

VDS max

60 V

VGS(th) range

1.1 V to 2.3 V

Apps

Automotive battery management system (BMS) - 48 V, Automotive head unit, Multicopters and drones, Solid-state circuit breaker (SSCB), DIN rail power supply solutions

Features

  • Low 1.15 mohm max RDS(on)
  • Higher operating temp rating to 175°C
  • Low RthJC
  • Excellent thermal behavior
  • Low reverse recovery charge

Description

  • Lower full load temperature
  • Less paralleling
  • Reduced overshoot
  • Increased system power density
  • Smaller size
  • System cost reduction
  • Engineering costs and effort reduction

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