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IAUMN10S5N016G
  • IAUMN10S5N016G

IAUMN10S5N016G

Active and preferred

OptiMOS™ 5 100V automotive MOSFET offered in our new mTOLG 8x8mm2 SMD package. It is designed specifically for high performance, high quality and the robustness needed for demanding automotive applications. This mTOLG package MOSFETs is recommended for aluminum (Al) core IMS and copper (Cu) based metal substrates because of its enhanced TCoB performance.

Infineon Technologies IAUMN10S5N016G Product Info

16 April 2026 0

Parameters

Country of Assembly (Last BE site, current, subject to change)

Malaysia

Country of Diffusion (Last FE site, current, subject to change)

Germany

ID (@25°C) max

220 A

Launch year

2024

Operating Temperature range

-55 °C to 175 °C

Package

PG-HSOG-4

Planned to be available until at least

2038

Polarity

N

QG (typ @10V) max

190 nC

QG (typ @10V)

142 nC

Qualification

Automotive

RDS (on) (@10V) max

1.6 mΩ

Technology

OptiMOS™5

VDS max

100 V

VGS(th) range

2.2 V to 3.8 V

VGS(th)

3 V

Features

  • Gullwing shaped leads
  • Compatible with other 8x8mm2 packages
  • Leading edge RDS(on)
  • Fast switching times (turn on/off)
  • Extended qualification beyond AEC-Q101
  • Enhanced electrical testing
  • 175°C operating temperature
  • 100% Avalanche tested
  • PPAP Capable Device

Description

  • Enhanced temperature cycling results
  • Recommended for metal substrates
  • Minimized conduction losses
  • Excellent switching performance
  • High power density
  • Option to use second source of 8x8mm2
  • Designed for automotive robustness
  • High quality production for automotive

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