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IDW80C65D1
  • IDW80C65D1

IDW80C65D1

Active and preferred

Rapid 1 switching 650 V, 80 A emitter controlled power silicon diodes in common cathode configuration and in a TO-247 package, allowing design optimization for more compact dimensions, easier assembly and consequently lower costs.

Infineon Technologies IDW80C65D1 Product Info

16 April 2026 0

Parameters

Configuration

Common Cathode

I(FSM) max

320 A

IF max

80 A

IF

40 A

IR max

40 µA

Irrm

6.9 A

Mounting

THT

Operating Temperature range

-40 °C to 175 °C

Package

TO-247

Ptot max

179 W

Qrr

0.49 µC

RthJC max

0.84 K/W

trr

129 ns

VF max

1.7 V

VF

1.35 V

Voltage Class max

650 V

Features

  • 1.35 V temperature-stable VF
  • Highest softness-factor for:
  • Highest softness-factor for:
  • Low EMI filtering
  • For 18 kHz to 40 kHz applications
  • Lowest Irrmfor:
  • Lowest losses on boost switch
  • Low thermal resistance

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