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S29GL128P90TFCR20
  • S29GL128P90TFCR20

S29GL128P90TFCR20

The S29GL128P90TFCR20 is a 128 Mbit, 3.0 V page-mode Flash memory built on 90 nm MirrorBit® technology. It features uniform 64 Kword (128 Kbyte) sectors, VersatileIO™ control for I/O voltage from 1.65 V to VCC, and a 32-word write buffer for fast programming. With random access time of 90 ns, page access of 25 ns, advanced sector protection, and 100,000 erase cycles per sector, it delivers reliability and robust data security.

Infineon Technologies S29GL128P90TFCR20 Product Info

16 April 2026 0

Parameters

Density

128 MBit

Family

GL-P

Initial Access Time

90 ns

Interface Frequency (SDR/DDR) (MHz)

NA

Interfaces

Parallel

Lead Ball Finish

Matte Tin Plating

Operating Temperature range

0 °C to 85 °C

Operating Voltage range

3 V to 3.6 V

Operating Voltage

3 V

Page Access Time

25 ns

Peak Reflow Temp

260 °C

Qualification

Commercial

Features

  • 90 nm MirrorBit process technology
  • Single 3 V read/program/erase operation
  • VersatileIO control (1.65 V to VCC I/O)
  • 32-word/64-byte write buffer
  • 8-word/16-byte page read buffer
  • Uniform 64 Kword/128 Kbyte sectors
  • 128-word/256-byte Secured Silicon Sector
  • Advanced sector protection methods
  • Program/Erase Suspend and Resume
  • Hardware data protection (WP#/ACC, VCC)
  • Write pulse glitch protection
  • 100,000 erase cycles per sector (typical)

Description

  • High density for embedded storage needs
  • Low voltage reduces power consumption
  • Flexible I/O for easy system integration
  • Fast programming with write buffer
  • Page read buffer speeds up data access
  • Simplifies memory management
  • Secure area for permanent IDs
  • Protects data from accidental changes
  • Suspend/resume boosts system efficiency
  • Hardware protection prevents data loss
  • Glitch protection ensures data integrity
  • High endurance for long device life

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