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ISC007N04NM6
  • ISC007N04NM6

ISC007N04NM6

Active and preferred

This best-in-class OptiMOS™6 power MOSFET 40 V normal level, featuring very low RDS(on) of 0.7mOhm, offers a benchmark solution for normal level (higher threshold voltage) applications such as battery-powered applications, battery-powered tools, battery management, and low voltage drives. A higher Vth for the normal level portfolio means that only larger gate voltage spikes would cause an unwanted turn-on.

Infineon Technologies ISC007N04NM6 Product Info

16 April 2026 0

Parameters

Budgetary Price €/1k

0.89

ID (@25°C) max

381 A

ID max

381 A

IDpuls max

1524 A

Mounting

SMD

Operating Temperature range

-55 °C to 175 °C

Package

SuperSO8 5x6

Pin Count

8 Pins

Polarity

N

Ptot max

188 W

QG (typ @10V)

94 nC

RDS (on) (@10V) max

0.7 mΩ

RDS (on) max

0.7 mΩ

Special Features

Fused leads

VDS max

40 V

VGS(th) range

1.8 V to 2.8 V

VGS(th)

2.3 V

Apps

Healthcare

Features

  • N-channel enhancement mode
  • Normal level gate threshold (2.3V typ)
  • MSL1 up to 260°C peak reflow
  • 175°C junction temperature
  • Optimized charge ratio
  • Low gate charge
  • 100% avalanche tested
  • Superior thermal resistance

Description

  • False turn-on immunity
  • Less Switching Losses, Low Gate Charge
  • Suits FOC and DTC motor control

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