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IPB70N10S3L-12
  • IPB70N10S3L-12

IPB70N10S3L-12

Active and preferred

Infineon Technologies IPB70N10S3L-12 Product Info

16 April 2026 0

Parameters

Budgetary Price €/1k

1.04, 1.04

Country of Assembly (Last BE site, current, subject to change)

Malaysia

Country of Diffusion (Last FE site, current, subject to change)

Austria, Germany, Malaysia

ID (@25°C) max

70 A

IDpuls max

280 A

Launch year

2008

Operating Temperature range

-55 °C to 175 °C

Package

D2PAK (PG-TO263-3)

Planned to be available until at least

2030

Polarity

N

Ptot max

125 W

QG (typ @10V) max

80 nC

QG (typ @10V)

60 nC

Qualification

Automotive

RDS (on) (@10V) max

11.8 mΩ

RthJC max

1.2 K/W

Technology

OptiMOS™T

VDS max

100 V

VGS(th) range

1.2 V to 2.4 V

VGS(th)

1.7 V

Features

  • N-channel - Enhancement mode
  • Automotive AEC Q101 qualified
  • MSL1 up to 260°C peak reflow
  • 175°C operating temperature
  • Green Package (RoHS compliant)
  • 100% Avalanche tested
  • PPAP Capable Device

Description

  • Highest current capability 180A
  • Lowest switching and conduction losses
  • Highest thermal efficiency
  • Robust packages & superior quality
  • Optimal total gate charge
  • Smaller drivers output stages

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