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IRF1310N
  • IRF1310N

IRF1310N

Active

Infineon Technologies IRF1310N Product Info

16 April 2026 0

Parameters

Budgetary Price €/1k

0.53

ID (@25°C) max

42 A

Mounting

THT

Operating Temperature range

-55 °C to 175 °C

Package

TO-220

Polarity

N

Ptot max

160 W

Qgd

38.7 nC

QG (typ @10V)

73.3 nC

RDS (on) (@10V) max

36 mΩ

RthJC max

0.95 K/W

Tj max

175 °C

VDS max

100 V

VGS(th) range

2 V to 4 V

VGS(th)

3 V

VGS max

20 V

Features

  • Planar cell structure for wide SOA
  • Optimized for broadest availability
  • Product qualification according to JEDEC
  • Silicon optimized for applications
  • Industry standard surface-mount power
  • High-current rating

Description

  • Increased ruggedness
  • Wide availability at distribution
  • Industry standard qualification
  • High performance, low-frequency
  • Drop-in replacement to existing devices
  • High current capability

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