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GS-065-008-6-L-TR
  • GS-065-008-6-L-TR

GS-065-008-6-L-TR

The GS-065-008-6-L is an enhancement-mode GaN-on-Si power transistor with properties that allow for high current, high voltage breakdown, and high switching frequency.Housed in the bottom-side cooled PDFN package, it offers very low junction-to-case thermal resistance, making it ideal for demanding high-power applications. These features combined ensure very high efficiency in power switching.

Infineon Technologies GS-065-008-6-L-TR Product Info

16 April 2026 0

Parameters

Green

RoHS compliant, Halogen free

ID (@25°C) max

8.8 A

IDpuls (@25°C) max

14.8 A

Package

PDFN

QG

1.6 nC

Qualification

Industrial

RDS (on) (typ)

165 mΩ

RDS (on) max

235 mΩ

VDS max

700 V

Apps

Data center power solutions, AC-DC power conversion for telecommunications infrastructure, USB-C chargers and adapters, Power conversion

Features

  • 700 V e-mode power transistor
  • 850 V transient drain-to-source voltage
  • Bottom-cooled, small 5x6 mm PDFN package
  • RDS(on) = 165 mΩ
  • IDSmax,DC = 8.8 A /IDSmax,Pulse = 14.8 A
  • Ultralow FOM
  • Gate drive requirements (0 V to 6 V)
  • High switching frequency (> 1 MHz)
  • Fast, controllable fall and rise times
  • Reverse conduction capability
  • Zero reverse recovery loss

Description

  • Supports high operating frequency
  • Enables highest system efficiency
  • Enables ultra power density designs
  • Supports BOM cost savings

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