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IPC302N20NFD
  • IPC302N20NFD

IPC302N20NFD

OptiMOS™ Fast Diode (FD) 200 V and 250 V, offering best-in-class on-state resistance (RDS(on)) power MOSFETs with unique performance. The leading RDS(on) and figure of merit (FOM) characteristics reduce power losses, improve overall efficiency and increase power density. The 200V and 250V product families are optimized for applications such as lighting for 110 V AC networks, HID lamps, DC-DC converters and PoE.

Infineon Technologies IPC302N20NFD Product Info

16 April 2026 0

Parameters

Die Size (Y)

4.5 mm

Die Size (Area)

30.15 mm²

Die Size (X)

6.7 mm

EAS/Avalanche Energy

45 mJ

Mode

Enhancement

Output Drivers

1

Polarity

N

RDS (on)

9.4 mΩ

RDS (on) (@10V) max

100 mΩ

Technology

OptiMOS™ 3

Thickness

250

VBRDSS max

200 V

VDS

200 V

VDS max

200 V

VGS(th) range

2 V to 4 V

Features

  • Industry’s lowest RDS(on)
  • „Lowest Qg and Qgd
  • „World’s lowest FOM
  • Fast switching diode

Description

  • Highest efficiency
  • „Highest power density
  • „Lowest board space consumption
  • „Less paralleling required
  • „System cost improvement
  • „Easy-to-design products
  • „Environmentally friendly

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