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IQE022N06LM5CGSC
  • IQE022N06LM5CGSC

IQE022N06LM5CGSC

Active and preferred

IQE022N06LM5CGSC is Infineon’s new best-in-class OptiMOS™ 5 power MOSFET 60 V logic level in a PQFN 3.3x3.3 Source-Down Center-Gate (CG) dual-side cooling (DSC) package, offering the industry’s lowest on-state resistance RDS(on) at 25˚C , superior thermal performance, and optimized parallelization. The OptiMOS™ Source-Down is a revolutionary design with a flipped silicon die inside, which offers several advantages, such as increased thermal capability, advanced power density and improved layout possibilities. Combined with the innovative dual-side cooling package, which can dissipate up to three times more power than the traditional overmolded package, IQE022N06LM5CGSC is targeted for high power density and performance SMPS products commonly found in telecom and data servers.

Infineon Technologies IQE022N06LM5CGSC Product Info

16 April 2026 0

Parameters

Budgetary Price €/1k

1.33

ID (@25°C) max

151 A

IDpuls max

604 A

Operating Temperature range

-55 °C to 175 °C

Package

PQFN 3.3x3.3 Source-Down

Polarity

N

Ptot max

100 W

QG (typ @4.5V)

26 nC

QG (typ @10V)

53 nC

RDS (on) (@10V) max

2.2 mΩ

RDS (on) (@4.5V) max

2.9 mΩ

Special Features

Logic Level, Center-Gate Dual-Side Cooling

VDS max

60 V

VGS(th) range

1.1 V to 2.3 V

VGS(th)

1.7 V

Features

  • Logic level allows lower Qrr
  • Reduced RDS(on) by up to 30%
  • Improved RthJCover PQFN
  • New, optimized layout possibilities
  • Center Gate optimized for paralleling

Description

  • Enabling highest power density
  • Superior thermal performance
  • Efficient layout for space use
  • Simplified MOSFET parallelization

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