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IQE010N04LM7CGSC
  • IQE010N04LM7CGSC

IQE010N04LM7CGSC

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Infineon latest OptiMOS™ 7 40 V switching-optimized MOSFET offers an unprecedented level of application-optimization, enabling peak performance across a range of applications, including data centers, artificial intelligence, telecommunications, and more. It delivers up to 25% improved conduction loss and up to 20% betterFOM Qg and FOM Qoss vs. OptiMOS™ 6, enabling higher efficiency and power density in soft-switching DC-DC, IBC and 48 V conversion.

Infineon Technologies IQE010N04LM7CGSC Product Info

16 April 2026 0

Parameters

ID (@25°C) max

270 A

IDpuls max

1080 A

Operating Temperature range

-55 °C to 175 °C

Package

PQFN 3.3x3.3 Source-Down

Polarity

N

QG (typ @4.5V)

18.9 nC

QG (typ @10V)

39 nC

RDS (on) (@4.5V) max

1.3 mΩ

RDS (on) (@10V) max

1 mΩ

Special Features

Logic Level, Switching optimized, Dual-Side Cooling

VDS max

40 V

VGS(th) range

1.1 V to 1.7 V

VGS(th)

1.4 V

Apps

Data center power solutions, Server power supply units (PSU), Medium voltage IBC (48 V), Telecommunications infrastructure, Power conversion

Features

  • Application-specific MOSFET optimization
  • Up to 25% lower conduction loss
  • Up to -25% RDS(on) vs. OptiMOS™ 6
  • Controlled charges for switching
  • Up to 20% better FOM Qg, FOM Qoss
  • Source-down dual-side cooled (DSC)
  • PQFN 3.3×3.3 footprint

Description

  • Higher power density
  • Higher efficiency at full load
  • High frequency switching enablement
  • Increased thermal performance
  • Lower switching losses in fast designs
  • Simplified paralleling via Center Gate

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