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IQE020N04LM6CG
  • IQE020N04LM6CG

IQE020N04LM6CG

Active and preferred

IQE012N03LM5CG, OptiMOS™ 6 40 V power MOSFET, 1.20 mOhm, in a innovative PQFN 3.3x3.3 Source-Down Center-Gate offers a flipped chip design connecting the source potential directly to the PCB over the thermal pad, giving several advantages, such as increased thermal capability, advanced power density and improved layout possibilities in a Center-Gate footprint for easy design-in on space-constrained PCB areas.

Infineon Technologies IQE020N04LM6CG Product Info

16 April 2026 0

Parameters

ID (@25°C) max

166 A

IDpuls max

664 A

Operating Temperature range

-55 °C to 175 °C

Package

PQFN 3.3x3.3 Source-Down

Polarity

N

Ptot max

107 W

QG (typ @10V)

25 nC

QG (typ @4.5V)

12.1 nC

RDS (on) (@10V) max

2.05 mΩ

RDS (on) (@4.5V) max

3 mΩ

RthJC max

1.4 K/W

Special Features

Logic Level

VDS max

40 V

VGS(th) range

1.3 V to 2.3 V

VGS(th)

1.6 V

Apps

Medium voltage IBC (48 V), Telecommunications infrastructure, Cordless power tools and outdoor power equipment

Features

  • Extended gate voltage rating
  • 175°C temperature rating
  • Best price performance

Description

  • Gate voltage overdrive
  • Fast charge & discharge of Cg
  • Increased reliability
  • High power density
  • Competitive price

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