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IPT029N08N5
  • IPT029N08N5

IPT029N08N5

OptiMOS™ 5 80 V power MOSFET , especially designed for Synchronous Rectification for telecom and server power supplies . In addition, the device can also be utilized in other industrial applications such as solar , low voltage drives and adapter . Within seven different packages, the OptiMOS™ 5 80 V MOSFETs offer the industry’s lowest RDS(on). Additionally, compared to the previous generation, OptiMOS™ 5 80 V has an RDS(on) reduction of up to 43%.

Infineon Technologies IPT029N08N5 Product Info

16 April 2026 0

Parameters

Budgetary Price €/1k

1.25

ID (@25°C) max

169 A

IDpuls max

676 A

Mounting

SMD

Operating Temperature range

-55 °C to 175 °C

Package

TOLL (HSOF-8)

Pin Count

8 Pins

Polarity

N

Ptot max

167 W

Qgd

15 nC

QG (typ @10V)

70 nC

RDS (on) (@10V) max

2.9 mΩ

RthJA max

62 K/W

RthJC max

0.9 K/W

Rth

0.9 K/W

VDS max

80 V

VGS(th) range

2.2 V to 3.8 V

VGS(th)

3 V

Apps

On-board charging (OBC), Medium voltage (MV) drive

Features

  • Optimized for synchronous rectification
  • Ideal for high switching frequency
  • Output capacitance reduction of up to 44 %
  • RDS(on) reduction of up to 43 % from previous generation

Description

  • Highest system efficiency
  • Reduced switching and conduction losses
  • Less paralleling required
  • Increased power density
  • Low voltage overshoot

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