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IAUZ30N06S5L140
  • IAUZ30N06S5L140

IAUZ30N06S5L140

Active and preferred

The new OptiMOS™ 5 technology for 60V MOSFETs in the leadless S3O8 (3x3mm²) small footprint package, offering leading performance by providing low RDS(on), Qg, and Gate capacitance, while minimizing conduction and switching losses.

Infineon Technologies IAUZ30N06S5L140 Product Info

16 April 2026 0

Parameters

Country of Assembly (Last BE site, current, subject to change)

Malaysia

Country of Diffusion (Last FE site, current, subject to change)

Germany

ID (@25°C) max

30 A

Launch year

2020

Operating Temperature range

-55 °C to 175 °C

Package

PG-TSDSON-8

Planned to be available until at least

2038

Polarity

N

QG (typ @10V)

9.4 nC

QG (typ @10V) max

12.2 nC

Qualification

Automotive

RDS (on) (@10V) max

14 mΩ

Technology

OptiMOS™5

VDS max

60 V

VGS(th) range

1.2 V to 2.2 V

VGS(th)

1.7 V

Apps

Automotive body control module (BCM), Chassis control & safety, Electric brake booster

Features

  • Copper clips for higher current loading
  • Designed for fast-switching applications
  • Reduction in Ciss & Coss from prior tech
  • Improved EMC behavior
  • AEC-Q101 and PPAP Capable device
  • RoHS Compliant

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