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IPG20N04S4-09
  • IPG20N04S4-09

IPG20N04S4-09

Infineon Technologies IPG20N04S4-09 Product Info

16 April 2026 0

Parameters

Budgetary Price €/1k

0.53

Country of Assembly (Last BE site, current, subject to change)

Malaysia

Country of Diffusion (Last FE site, current, subject to change)

Malaysia

ID (@25°C) max

20 A

IDpuls max

80 A

Operating Temperature range

-55 °C to 175 °C

Package

dual SS08 (PG-TDSON-8)

Polarity

N+N

Ptot max

54 W

QG (typ @10V) max

28 nC

QG (typ @10V)

21.7 nC

Qualification

Automotive

RDS (on) (@10V) max

8.6 mΩ

RthJC max

2.8 K/W

Technology

OptiMOS™T2

VDS max

40 V

VGS(th) range

2 V to 4 V

VGS(th)

3 V

Features

  • Dual N-ch-Normal Level-Enhancement mode
  • Automotive AEC Q101 qualified
  • MSL1 up to 260°C peak reflow
  • 175°C operating temperature
  • Green Product (RoHS compliant)
  • 100% Avalanche tested
  • PPAP Capable Device

Description

  • Large source lead for wire bonding
  • Equal performance to DPAK, same die size
  • Exposed pad for thermal transfer
  • 2 N-Channel MOSFETs; Isolated Leadframes

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