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ISC013N06NM5SC
  • ISC013N06NM5SC

ISC013N06NM5SC

Active and preferred

OptiMOS™ 5 switching‑optimized power MOSFET in 60 V in PQFN 5x6 Dual‑Side Cooled drain‑down package delivers low RDS(on), reduced switching losses and strong thermal performance for AI, Datacenter & Telecom power conversion. The drain‑down DSC 5x6 package enables high current density and compact power architectures, meeting efficiency, transient and reliability targets for GPU/accelerator rails in dense data‑center servers.

Infineon Technologies ISC013N06NM5SC Product Info

16 April 2026 0

Parameters

ID (@25°C) max

276 A

IDpuls max

1104 A

Operating Temperature range

-55 °C to 175 °C

Package

SuperSO8 5x6 DSC

Polarity

N

Ptot max

188 W

QG (typ @10V)

90 nC

RDS (on) (@10V) max

1.3 mΩ

Special Features

Dual-Side Cooling

VDS max

60 V

VGS(th) range

2.1 V to 3.3 V

VGS(th)

2.8 V

Apps

Data center power solutions, Server power supply units (PSU), Medium voltage IBC (48 V), Telecommunications infrastructure, Power conversion

Features

  • PQFN 5x6, dual-side cooled package
  • Low RDS(on)
  • Induced turn on immunity, fast switching
  • Low-voltage overshoot
  • Low Qg/Qoss for high frequency operation
  • +175°C junction temperature rating

Description

  • Ease of use
  • Highest system efficiency
  • Low conduction & switching losses
  • Higher conversion efficiency, less heat
  • Benchmark reliabiltiy
  • Increased power density

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