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IPF031N13NM6
  • IPF031N13NM6

IPF031N13NM6

Active and preferred

This product effectively bridges the gap between the 120 V and 150 V MOSFETs. In D²PAK 7-pin OptiMOS™ 6 135 V achieves ~53% improvements in on-state resistance (RDS(on)) and ~38% lower gate threshold voltage spread compared to the OptiMOS™ 5 150 V. This results in lower conduction losses and increased output power. The low VGS(th) spread leads to improved dynamic current sharing, that enables you to reduce the number of MOSFETs and lowers the system costs.

Infineon Technologies IPF031N13NM6 Product Info

16 April 2026 0

Parameters

Budgetary Price €/1k

2.25

ID (@25°C) max

207 A

Operating Temperature range

-55 °C to 175 °C

Package

D2PAK 7pin (TO-263 7pin)

Polarity

N

QG (typ @10V)

104 nC

RDS (on) (@10V) max

3.1 mΩ

VDS max

135 V

VGS(th) range

2.5 V to 3.5 V

VGS(th)

3 V

Features

  • Up to 53% lower ON-state-resistance
  • Up to 38% lower gate threshold voltage spread
  • Up to 70% reduction of reverse recovery charge (Qrr)
  • Up to 45% lower peak reverse recovery current
    (-Irrm)

Description

  • System cost reduction
  • Lower conduction losses and increased output power
  • Lower EMI
  • Less paralleling required
  • Higher power density designs

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