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IPD50N03S2L-06
  • IPD50N03S2L-06

IPD50N03S2L-06

Infineon Technologies IPD50N03S2L-06 Product Info

16 April 2026 1

Parameters

Budgetary Price €/1k

0.6

Country of Assembly (Last BE site, current, subject to change)

Malaysia

Country of Diffusion (Last FE site, current, subject to change)

Austria

ID (@25°C) max

50 A

IDpuls max

200 A

Operating Temperature range

-55 °C to 175 °C

Package

DPAK (PG-TO252-3)

Polarity

N

Ptot max

136 W

QG (typ @10V) max

68 nC

QG (typ @10V)

50 nC

Qualification

Automotive

RDS (on) (@10V) max

6.4 mΩ

RthJC max

1.1 K/W

Technology

OptiMOS™

VDS max

30 V

VGS(th) range

1.2 V to 2 V

VGS(th)

1.6 V

Features

  • N-channel-Logic Level-Enhancement mode
  • AEC qualified
  • MSL1 up to 260°C peak reflow
  • 175°C operating temperature
  • Green Product (RoHS compliant)
  • 100% Avalanche tested
  • Ultra low RDS(on)
  • PPAP Capable Device

Description

  • Lowest switching and conduction losses
  • Highest thermal efficiency
  • Robust packages & superior quality
  • Optimal total gate charge
  • Smaller driver output stages

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