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CYRS1069G30-10FZMB
  • CYRS1069G30-10FZMB

CYRS1069G30-10FZMB

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Infineon’s FAST 16Mb asynchronous SRAM family, designed with Infineon’s patented RADSTOPTM technology is ideal for space as well as other harsh environment applications. The 16Mb Fast SRAM is a high-performance, low power SRAM with ECC organized as 2-Mbit by 8-bits. Infineon’s radiation hardened memories are QML-V certified, meeting the reliability and lifecycle demands of extreme environments. Our RADSTOPTM memory solutions enhance overall system computing limits while providing Size, Weight, and Power (SWaP) benefits and greater design flexibility. Note: this part is superseded by 5962R2020202VXC.

Infineon Technologies CYRS1069G30-10FZMB Product Info

16 April 2026 0

Parameters

Density

16 MBit

Device weight

3878.7 mg

Family

FAST SRAM

Interfaces

Parallel

Operating Temperature range

-55 °C to 125 °C

Operating Voltage range

2.2 V to 3.6 V

Organization (X x Y)

2Mb x 8

Planned to be available until at least

2033

Qualification

Military

Features

  • 16 Mb density, 2M x 8
  • Embedded ECC for single-bit error correction
  • 10ns access times
  • 2.2 V to 3.6 V operating voltage range
  • –55°C to +125°C military temperature grade
  • 36-pin ceramic flat pack (CFP)
  • DLAM QML-V qualified 
  • Radiation performance
  • TID: 200 Krad
  • SEL: > 60 MeV.cm2/mg @ 95°C
  • SEU: ≤ 1 x 10-10 upsets/bit-day

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