Product
0
IPC331N15NM5R
  • IPC331N15NM5R

IPC331N15NM5R

Active and preferred

Infineon’s OptiMOS™ 5 power MOSFET 150V technology offers a breakthrough reduction in RDS(on) (up to 25% compared to the next best alternative in SuperSO8) and Qrr without compromising FOMgd and FOMOSS, effectively reducing design effort whilst optimizing system efficiency. Furthermore, the ultra-low reverse-recovery charge (lowest Qrr in SuperSO8 = 26nC) increases commutation ruggedness.

Infineon Technologies IPC331N15NM5R Product Info

16 April 2026 0

Parameters

Die Size (X)

7.05 mm

Die Size (Y)

4.7 mm

Die Size (Area)

33.13 mm²

EAS/Avalanche Energy

70 mJ

Mode

Enhancement

Polarity

N

RDS (on)

2.9 mΩ

Technology

OptiMOS™ 5

Thickness

246

VDS

150 V

VDS max

150 V

VGS(th) range

3 V to 4.6 V

Features

  • Monolithically integrated gate resistor
  • Optimized for applications in modules
  • Ultra-low recovery charge Qrr
  • Ultralow output capacitance Coss
  • RDS(on) reduction vs previous generation

Description

  • Highest system efficiency
  • Reduced switching and conduction losses
  • Less paralleling required
  • Increased power density
  • Lower voltage overshoot
  • Gate connection for paralleling MOSFETs

Subscribe to Welllinkchips !
Your Name
* Email
Popular Posts
Featured Parts More >
Submit a request
CONTACT US
Company address

WELL LINK CHIPS GROUP CO.,LIMITED FLAT/RM 1802 BEVERLY HOUSE 93-107 LOCKHART ROAD WANCHAI HK

Send Enquiry
SEND e-MAIL
Office hour from 9am to 6pm ,
Monday through Friday, UTC/GMT +8