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IPB80N04S3-04
  • IPB80N04S3-04

IPB80N04S3-04

Infineon Technologies IPB80N04S3-04 Product Info

16 April 2026 0

Parameters

Budgetary Price €/1k

1.06

Country of Assembly (Last BE site, current, subject to change)

Malaysia

Country of Diffusion (Last FE site, current, subject to change)

Malaysia

ID (@25°C) max

80 A

IDpuls max

320 A

Operating Temperature range

-55 °C to 175 °C

Package

D2PAK (PG-TO263-3)

Polarity

N

Ptot max

136 W

QG (typ @10V) max

80 nC

QG (typ @10V)

60 nC

Qualification

Automotive

RDS (on) (@10V) max

3.8 mΩ

RthJC max

1.1 K/W

Technology

OptiMOS™T

VDS max

40 V

VGS(th)

3 V

VGS(th) min

2.1 V

VGS(th) max

4 V

Features

  • N-Channel - Enhancement mode
  • Automotive AEC Q101 qualified
  • MSL1 up to 260°C peak reflow
  • 175°C operating temperature
  • Green package (lead free)
  • 100% Avalanche tested
  • PPAP Capable Device

Description

  • Highest current capability
  • Lowest switching and conduction losses
  • Highest thermal efficiency
  • Robust packages & superior quality
  • Optimized total gate charge
  • Smaller driver output stages

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