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BFP740F
  • BFP740F

BFP740F

The BFP740F is a Silicon Germanium Carbon (SiGe:C) NPN Heterojunction wideband Bipolar RF Transistor (HBT).

Infineon Technologies BFP740F Product Info

16 April 2026 0

Parameters

fT

45 GHz

Gmax

28 dB @900 MHz

IC max

45 mA

NFmin

0.45 dB @900 MHz

OIP3

25 dBm

OP1dB

11 dBm

Package

TSFP-4

Ptot

160 mW

VCEO max

4 V

Apps

Domestic robots

Features

  • Low noise figure NFmin = 1 dB at 5.5 GHz, 3 V, 6 mA
  • High gain Gms: 21 dB at 5.5 GHz, 3 V, 15 mA
  • OIP3 = 24 dBm at 5.5 GHz, 3 V, 15 mA
  • Low profile and small form factor leadless package

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