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IPB160N04S2L-03
  • IPB160N04S2L-03

IPB160N04S2L-03

Active and preferred

Infineon Technologies IPB160N04S2L-03 Product Info

16 April 2026 0

Parameters

Country of Assembly (Last BE site, current, subject to change)

Malaysia

Country of Diffusion (Last FE site, current, subject to change)

Malaysia

ID (@25°C) max

160 A

IDpuls max

640 A

Launch year

2006

Operating Temperature range

-55 °C to 175 °C

Package

D2PAK (PG-TO263-7)

Planned to be available until at least

2029

Polarity

N

Ptot max

300 W

QG (typ @10V) max

230 nC

QG (typ @10V)

163 nC

Qualification

Automotive

RDS (on) (@10V) max

2.7 mΩ

RthJC max

0.5 K/W

Technology

OptiMOS™

VDS max

40 V

VGS(th) range

1.2 V to 2 V

VGS(th)

1.6 V

Features

  • N-channel-Logic Level - Enhancement mode
  • Automotive AEC Q101 qualified
  • MSL1 up to 260°C peak reflow
  • 175°C operating temperature
  • Green package (lead free)
  • Ultra low RDS(on)
  • 100% Avalanche tested
  • PPAP Capable

Description

  • Highest current capability
  • Lowest switching and conduction losses
  • Highest thermal efficiency
  • Robust packages & superior quality
  • Optimal total gate charge
  • Smaller driver output stages

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