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IPB133N12NM6
  • IPB133N12NM6

IPB133N12NM6

Active and preferred

This is a normal level 120 V MOSFET in D²PAK 3-pin packaging with 13.3 mOhm on-resistance. IPB133N12NM6 is part of Infineon’s OptiMOS™ 6 power MOSFET family.

Infineon Technologies IPB133N12NM6 Product Info

16 April 2026 0

Parameters

ID (@25°C) max

55 A

Operating Temperature range

-55 °C to 175 °C

Package

D2PAK (TO-263)

Polarity

N

QG (typ @10V)

15 nC

RDS (on) (@10V) max

13.3 mΩ

VDS max

120 V

VGS(th) range

2.6 V to 3.6 V

VGS(th)

3.1 V

Features

  • Compared to OptiMOS™ the technology features:
  • up to 40% better RDS(on)
  • up to 50% better FOMg
  • up to 50% better Qrr

Description

  • Very low on-resistance
  • Very low reverse recovery charge
  • Excellent gate charge x RDS(on)
  • High avalanche energy rating
  • 175°C junction temperature rating
  • Pb-free plating
  • RoHS compliant
  • Halogen-free
  • MSL1 classified

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