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AIMDQ75R027M1H
  • AIMDQ75R027M1H

AIMDQ75R027M1H

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The CoolSiC™ Automotive MOSFET 750 V G1 leverages more than 20 years of SiC experience in Infineon.  It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling the simplified and cost effective system design for top efficiency and power density. The innovative top-side-cooling package further enhance the CoolSiC™ 750 V strengths offering more density, optimized power loop design and less system and assembly cost.

Infineon Technologies AIMDQ75R027M1H Product Info

16 April 2026 1

Parameters

ID (@25°C) max

64 A

Mounting

SMT

Operating Temperature range

-55 °C to 175 °C

Package

Q-DPAK

Polarity

N

Qualification

Automotive

RDS (on) (@ Tj = 25°C) max

36 mΩ

RDS (on) (@ Tj = 25°C)

27 mΩ

Technology

CoolSiC™ G1

VDS max

750 V

Apps

DC-DC converter high-voltage, On-board charging (OBC)

Features

  • Highly robust 750 V technology
  • Best-in-class RDS(on) x Qfr
  • Excellent Ron x Qoss and Ron x QG
  • Low Crss/Ciss together and high Vgsth
  • 100% avalanche tested 
  •  .XT interconnection technology for best-in-class thermal performance
  • Cutting-edge top-side-cooled package

Description

  • Superior efficiency in hard switching
  • Enables higher switching frequency
  • Higher reliability
  • Withstand bus voltages beyond 500 V
  • Robustness against parasitic turn
  • Unipolar driving
  • Best-in-class thermal dissipation

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