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IPB123N10N3 G
  • IPB123N10N3 G

IPB123N10N3 G

Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit).

Infineon Technologies IPB123N10N3 G Product Info

16 April 2026 0

Parameters

Budgetary Price €/1k

0.57

Ciss

1880 pF

Coss

330 pF

ID (@25°C) max

58 A

IDpuls max

232 A

Operating Temperature range

-55 °C to 175 °C

Package

D2PAK (TO-263)

Polarity

N

Ptot max

94 W

QG (typ @10V)

26 nC

RDS (on) (@10V) max

12.3 mΩ

Rth

1.6 K/W

VDS max

100 V

VGS(th) range

2 V to 3.5 V

VGS(th)

2.7 V

Apps

Complete system solutions for smart TVs

Features

  • Excellent switching performance
  • World’s lowest R DS(on)
  • Low Q g and Q gd
  • Excellent gate charge
  • RoHS compliant-halogen free
  • MSL1 rated

Description

  • Environmentally friendly
  • Increased efficiency
  • Highest power density
  • Less paralleling required
  • Smallest board-space consumption
  • Easy-to-design products

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