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IAUZN04S7L046
  • IAUZN04S7L046

IAUZN04S7L046

Active and preferred

A high-current, low RDS(on) power MOSFET in a 3x3mm² advanced leadless package with a Cu-Clip for low package Ron and minimal stray inductance, offering high power density, low conduction losses, and optimized switching behavior, with a reduced form factor compared to traditional leaded packages, ideal for automotive applications, e.g. power distribution, body control modules, and electric motors.

Infineon Technologies IAUZN04S7L046 Product Info

16 April 2026 0

Parameters

Country of Assembly (Last BE site, current, subject to change)

Malaysia

Country of Diffusion (Last FE site, current, subject to change)

Austria

ID (@25°C) max

60 A

Launch year

2024

Operating Temperature range

-55 °C to 175 °C

Planned to be available until at least

2038

Polarity

N

QG (typ @10V) max

16 nC

QG (typ @10V)

12 nC

Qualification

Automotive

RDS (on) (@10V) max

4.64 mΩ

Technology

OptiMOS™7

VDS max

40 V

VGS(th) range

1.2 V to 1.8 V

VGS(th)

1.5 V

Features

  • 3x3 mm² small footprint
  • 60 A high current capability
  • Available in leading-edge OptiMOS™ 7 40V
  • RDS(on) range 1.2 mΩ – 4.9 mΩ
  • Advanced leadless package
  • High avalanche capability
  • SOA ruggedness
  • PPAP Capable Device

Description

  • Highest power and current density
  • High thermal capacity lead-frame package
  • Reduced conduction losses
  • Optimized switching behavior
  • Reduced form factor vs traditional packages
  • JEDEC Industry standard package

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