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IPB048N15N5
  • IPB048N15N5

IPB048N15N5

Active and preferred

OptiMOS™ 5 150 V power MOSFETs are particularly suitable for low voltage drives such as forklift and e-scooter, as well as telecom and solar applications, offering a breakthrough reduction in R DS(on) (up to 25% compared to the next best alternative in SuperSO8) and Q rr without compromising FOM gd and FOM OSS, effectively reducing design effort whilst optimizing system efficiency.

Infineon Technologies IPB048N15N5 Product Info

16 April 2026 0

Parameters

Battery voltage

72-96 V

Budgetary Price €/1k

1.92

Ciss

6000 pF

Coss

1500 pF

ID (@25°C) max

120 A

IDpuls max

480 A

Mounting

SMD

Operating Temperature range

-55 °C to 175 °C

Package

D2PAK (TO-263)

Pin Count

3 Pins

Polarity

N

Ptot max

300 W

Qgd

16 nC

QG (typ @10V)

80 nC

RDS (on) (@10V) max

4.8 mΩ

RthJA max

62 K/W

RthJC max

0.5 K/W

Rth

0.5 K/W

VDS max

150 V

VGS(th) range

3 V to 4.6 V

VGS(th)

3.8 V

Apps

Automotive battery management system (BMS) - high-voltage, Light electric vehicle solutions, Telecommunications infrastructure, General purpose motor drive, Medium voltage (MV) drive

Features

  • Firm FOMgd and FOMoss with lower RDS(on)
  • Lower output charge
  • Ultra-low reverse recovery charge
  • Increased commutation ruggedness
  • Higher switching frequency possible

Description

  • Reduced paralleling
  • Higher power density designs
  • More rugged products
  • System cost reduction
  • Improved EMI behavior

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