Product
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IMZA120R014M1H
  • IMZA120R014M1H

IMZA120R014M1H

CoolSiC™ MOSFET discrete 1200 V, 14 mΩ G1 in TO247-4 package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability. The SiC MOSFET offers the lowest gate charge and device capacitance levels seen in 1200 V switches, no reverse recovery losses of the internal commutation proof body diode, temperature independent low switching losses, and threshold-free on-state characteristic.

Infineon Technologies IMZA120R014M1H Product Info

16 April 2026 0

Parameters

Ciss

4580 pF

Coss

211 pF

ID (@25°C) max

127 A

Mounting

THT

Operating Temperature range

-55 °C to 175 °C

Package

TO-247-4

Pin Count

4 Pins

Polarity

N

Ptot (@ TA=25°C) max

455 W

Qgd

32 nC

QG

110 nC

Qualification

Industrial

RDS (on) (@ Tj = 25°C)

14 mΩ

RthJA max

62 K/W

RthJC max

0.33 K/W

Technology

CoolSiC™ G1

Tj max

175 °C

VDS max

1200 V

Apps

Automotive secondary power distribution unit, Battery formation and testing, Battery energy storage (BESS), EV charging, Photovoltaic, Power optimizer solutions for scalable PV systems, Motor control, Uninterruptible power supplies (UPS)

Features

  • Best in class switching losses
  • Best in class conduction losses
  • Benchmark gate threshold voltage
  • Vth > 4 V
  • 0V turn-off gate voltage applicable
  • Wide gate-source voltage range
  • Robust diode for hard commutation
  • Temp. ind. turnoff switching losses
  • .XT interconnection technology

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