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BSO612CV G
  • BSO612CV G

BSO612CV G

Complementary power MOSFETs - an n-channel and a p-channel power MOSFET within the same package - are part of Infineon’s famous low voltage OptiMOS™ families, the market leader in high efficiency solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle).

Infineon Technologies BSO612CV G Product Info

16 April 2026 0

Parameters

Budgetary Price €/1k

0.34

Ciss

275 pF, 320 pF

Coss

105 pF, 90 pF

ID (@25°C) max

3 A, -2 A

ID max

-2 A, 3 A

IDpuls max

-8 A, 12 A

Mode

Enhancement

Mounting

SMT

Operating Temperature range

-55 °C to 150 °C

Package

SO-8

Pin Count

8 Pins

Polarity

N+P

Ptot max

2 W

QG (typ @10V)

10.3 nC, 10.5 nC

RDS (on) (@10V) max

120 mΩ, 300 mΩ

RthJA max

62.5 K/W

VDS max

-60 V, 60 V

VGS(th) range

-2.1 V to -4 V, 2.1 V to 4 V

VGS(th)

3 V

Features

  • Complementary p- + n-channel
  • Enhancement mode
  • Avalanche rated
  • Qualified according to AEC Q101
  • 100% lead-free;
  • RoHS compliant

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