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IMWH170R650M1
  • IMWH170R650M1

IMWH170R650M1

Active and preferred

The CoolSiC™ MOSFET 1700 V, 650 mΩ in a TO247-3-HCC package suits single-end fly-back auxiliary power supplies connected to DC-link voltages 600 V up to 1000 V in numerous power conversion applications. Key features include direct drivability by a fly-back controller, no need for a Gate driver IC, .XT interconnect technology for excellent thermal performance, and a high creepage clearance package for increased reliability.

Infineon Technologies IMWH170R650M1 Product Info

16 April 2026 0

Parameters

Ciss

337 pF

Coss

15 pF

ID (@ TC=25°C)

7.5 A

Package

TO-247 HCC

Pin Count

3 Pins

Qualification

Industrial

RDS (on) (@ Tj = 25°C)

650 mΩ

RthJA max

62 K/W

RthJC

1.69 K/W

Technology

CoolSiC™ G1

VDS max

1700 V

Apps

Battery energy storage (BESS), EV charging, General purpose motor drive, 3-phase string inverter solutions, Uninterruptible power supplies (UPS)

Features

  • Optimized for fly-back topologies
  • Extremely low switching loss
  • 12 V / 0 V gate-source voltage
  • Compatible with fly-back controllers
  • Gate threshold voltage, VGS(th) = 4.5 V
  • .XT interconnection technology
  • High creepage clearance package

Description

  • High efficiency for aux. power supplies
  • Better thermal performance & resistance
  • TO247 package for easy isolation design
  • No gate driver needed
  • Reduced system complexity
  • Higher power density
  • Robustness against harsh environment

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