Product
0
IMW120R220M1H
  • IMW120R220M1H

IMW120R220M1H

CoolSiC™ MOSFET discrete 1200 V, 220 mΩ G1 in TO247-3 package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability. The SiC MOSFET offers the lowest gate charge and device capacitance levels seen in 1200 V switches, no reverse recovery losses of the internal commutation proof body diode, temperature independent low switching losses, and threshold-free on-state characteristic.

Infineon Technologies IMW120R220M1H Product Info

16 April 2026 0

Parameters

Ciss

289 pF

Coss

16 pF

ID (@25°C) max

13 A

Mounting

THT

Operating Temperature range

-55 °C to 175 °C

Package

TO-247-3

Pin Count

3 Pins

Polarity

N

Ptot (@25°C) max

75 W

Qgd

2 nC

QG (typ @18V)

8.5 nC

Qualification

Industrial

RDS (on) (@ Tj = 25°C)

220 mΩ

RthJA max

62 K/W

RthJC max

2 K/W

Technology

CoolSiC™ G1

Tj max

175 °C

VDS max

1200 V

Apps

EV charging, General purpose motor drive, Photovoltaic, Uninterruptible power supplies (UPS)

Features

  • Best in class switching losses
  • Best in class conduction losses
  • Benchmark high threshold voltage
  • Vth > 4 V
  • 0V turn-off gate voltage for easy
  • Simple gate drive
  • Wide gate-source voltage range
  • Robust and low loss body diode
  • Rated for hard commutation
  • Temp. ind. turnoff switching losses

Subscribe to Welllinkchips !
Your Name
* Email
Popular Posts
Featured Parts More >
Submit a request
CONTACT US
Company address

WELL LINK CHIPS GROUP CO.,LIMITED FLAT/RM 1802 BEVERLY HOUSE 93-107 LOCKHART ROAD WANCHAI HK

Send Enquiry
SEND e-MAIL
Office hour from 9am to 6pm ,
Monday through Friday, UTC/GMT +8