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IAUCN10S5L110T
  • IAUCN10S5L110T

IAUCN10S5L110T

Active and preferred

IAUCN10S5L110T is an automotive MOSFET built with Infineon’s innovative, top-side cooled SSO10T 5x7mm2 SMD package. The SSO10T package helps customers achieve big advancements in cooling and power density. This product also utilizes Infineon’s OptiMOS™ 5 100 V power semiconductor technology. It is designed specifically for the high performance, quality, and robustness needed for demanding automotive applications.

Infineon Technologies IAUCN10S5L110T Product Info

16 April 2026 1

Parameters

ID (@25°C) max

61 A

Operating Temperature range

-55 °C to 175 °C

Package

PG-LHDSO-10

Planned to be available until at least

2040

Polarity

N

QG (typ @10V) max

25 nC

QG (typ @10V)

20 nC

Qualification

Automotive

RDS (on) (@10V) max

11.3 mΩ

Technology

OptiMOS™5

VDS max

100 V

VGS(th) range

1.2 V to 2.2 V

VGS(th)

1.7 V

Features

  • Direct cooling path to ECU housing
  • Virtually no heat flows into PCB
  • Industry’s largest exposed pad area
  • Freedom to route traces under package
  • Can mount parts on back side of PCB
  • Fast switching times (turn on/off)
  • Extended qualification beyond AEC-Q101
  • Enhanced electrical testing
  • Package is listed with JEDEC

Description

  • Enables excellent thermal management
  • Thermal impedance improved 20% to 50%
  • Thermal resistance improved 20% to 50%
  • Helps reduce ECU volume or PCB area
  • Helps reduce PCB cost (area, Cu, vias)
  • Reduces PCB and system design effort
  • Superior switching performance
  • Quality and robustness for automotive
  • Potential for second source supplier

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