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1EDC30I12MH
  • 1EDC30I12MH

1EDC30I12MH

EiceDRIVER™ 1200 V high-side gate driver IC with t ypical 5.9 A source and 6.2 A sink current in a wide-body package with CT technology for IGBT Modules .For higher isolation rating, higher current, shorter propagation delay, check out our X3 Compact family , 1ED3122MU12H . The DSO-8 150 mil narrow body version with great price performance ratio is also available: 1EDI30I12MF

Infineon Technologies 1EDC30I12MH Product Info

16 April 2026 1

Parameters

Channels

1

Configuration

High-side

Input Vcc range

3.1 V to 17 V

Isolation Type

Galvanic isolation - Functional

Output Current (Source)

5.9 A

Output Current (Sink)

6.2 A

PDout

400 mW

Qualification

Industrial

RDSON_H(max)

2.8 Ω

RDSON_H(typ)

1.5 Ω

RDSON_L (max)

3.4 Ω

RDSON_L(typ)

1.5 Ω

RthJA

165 K/W

Turn Off Propagation Delay

300 ns

Turn On Propagation Delay

300 ns

VBS UVLO (Off)

11.1 V

VBS UVLO (On)

12 V

VCC UVLO (Off)

2.75 V

VCC UVLO (On)

2.85 V

Voltage Class

1200 V

Apps

Hydrogen electrolysis, Photovoltaic, Uninterruptible power supplies (UPS)

Features

  • Recognized under UL1577
  • With VISO= 3000 V for 1 s
  • 1200V coreless Transformer
  • 3 A rail-to-rail outputs
  • 300 mil wide-body package
  • 8 mm creepage distance
  • Active Miller clamp

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