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IMDQ75R027M1H
  • IMDQ75R027M1H

IMDQ75R027M1H

The CoolSiC™ MOSFET 750 V G1 leverages more than 20 years of SiC experience in Infineon. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling a simplified and cost effective system design for top efficiency and power density. The innovative top-side-cooling package further enhance the CoolSiC™ 750 V strengths offering more density, optimized power loop design and less system and assembly cost.

Infineon Technologies IMDQ75R027M1H Product Info

16 April 2026 0

Parameters

ID (@25°C) max

64 A

Mounting

SMT

Operating Temperature range

-55 °C to 175 °C

Package

Q-DPAK

Polarity

N

Qualification

Industrial

RDS (on) (@ Tj = 25°C) max

36 mΩ

RDS (on) (@ Tj = 25°C)

27 mΩ

Technology

CoolSiC™ G1

VDS max

750 V

Apps

Server power supply units (PSU), AC-DC power conversion for telecommunications infrastructure, Battery energy storage (BESS), EV charging, Solid-state circuit breaker (SSCB), 1-phase string inverter solutions, Uninterruptible power supplies (UPS)

Features

  • Highly robust 750 V technology
  • Best-in-class RDS(on) x Qfr
  • Excellent Ron x Qoss and Ron x QG
  • Low Crss/Ciss together and high Vgsth
  • 100% avalanche tested 
  • .XT interconnection technology for best-in-class thermal performance
  • Cutting-edge top-side-cooled package 

Description

  • Superior efficiency in hard switching
  • Enables higher switching frequency
  • Higher reliability
  • Withstand bus voltages beyond 500 V
  • Robustness against parasitic turn
  • Unipolar driving
  • Best-in-class thermal dissipation

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