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BUP03CP008C-01
  • BUP03CP008C-01

BUP03CP008C-01

Active and preferred

Radiation tolerant, -30 V, -100 A, P-channel MOSFET, SuperSO8, 30 krad(Si) TID

Infineon Technologies BUP03CP008C-01 Product Info

16 April 2026 0

Parameters

ID (@25°C) max

-100 A

Operating Temperature range

-55 °C to 150 °C

Package

SuperSO8

Polarity

P

QG (typ @10V)

61 nC

Qualification

JEDEC

RDS (on) (@10V) max

8 mΩ

Technology

OptiMOS™

VBRDSS min

-30 V

VBRDSS max

-30 V

VGS(th) range

-2 V to -4.6 V

Apps

Space applications

Features

  • Low RDS(on)
  • SEE Hardened
  • TID tolerant up to 30 krad (Si)
  • P-channel

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