IMBF170R650M1

Active and preferred

CoolSiC™ 1700 V, 650 mΩ SiC MOSFET in a TO-263-7 high creepage package is optimized for fly-back topologies to be used in auxiliary power supplies connected to DC-link voltages 600 V up to 1000 V in numerous power applications.

Infineon Technologies IMBF170R650M1 Product Info

16 April 2026 0

Parameters

Ciss	422 pF
Coss	12 pF
ID (@25°C) max	7.4 A
Mounting	SMD
Operating Temperature range	-55 °C to 175 °C
Package	TO-263-7
Pin Count	7 Pins
Polarity	N
Ptot (@ TA=25°C) max	88 W
Qgd	3.3 nC
QG	8 nC
Qualification	Industrial
RDS (on) (@ Tj = 25°C)	650 mΩ
RthJA max	62 K/W
RthJC max	1.1 K/W
Technology	CoolSiC™ G1
Tj max	175 °C
VDS max	1700 V

Apps

Battery energy storage (BESS), EV charging, DIN rail power supply solutions, Industrial motor drives and controls, General purpose motor drive, Traction, Photovoltaic, Power conversion

Features

Optimized for fly-back topologies
Extremely low switching loss
12 V / 0 V gate-source voltage
Compatible with fly-back controller
Fully controllable dV/dt
SMD package
Enhanced creepage distances > 7 mm
And clearance distances, > 7 mm

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ELECTRONIC COMPONENTS
All In One Distributor

IMBF170R650M1

CoolSiC™ 1700 V, 650 mΩ SiC MOSFET in a TO-263-7 high creepage package is optimized for fly-back topologies to be used in auxiliary power supplies connected to DC-link voltages 600 V up to 1000 V in numerous power applications.

Infineon Technologies IMBF170R650M1 Product Info

Parameters

Apps

Features

SUBMITTED SUCCESSFULLY！

ELECTRONIC COMPONENTS All In One Distributor

IMBF170R650M1

CoolSiC™ 1700 V, 650 mΩ SiC MOSFET in a TO-263-7 high creepage package is optimized for fly-back topologies to be used in auxiliary power supplies connected to DC-link voltages 600 V up to 1000 V in numerous power applications.

Infineon Technologies IMBF170R650M1 Product Info

Parameters

Apps

Features

SUBMITTED SUCCESSFULLY！

ELECTRONIC COMPONENTS
All In One Distributor