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IGLT65R110B2
  • IGLT65R110B2

IGLT65R110B2

Active and preferred

The IGLT65R110B2 is a 650 V normally-off bidirectional power transistor in TOLT package, enabling high power density designs. The CoolGaNTM BDS 650 V G5 enables efficient voltage blocking in both directions, making it a versatile option for a wide range of applications and enabling cost-attractive topologies.

Infineon Technologies IGLT65R110B2 Product Info

16 April 2026 0

Parameters

Family

CoolGaN™ BDS 650 V G5

Green

RoHS compliant, Halogen free

ISS puls (@25°C) max

36 A

Package

PG-HDSOP-16

Planned to be available until at least

2035

Qualification

Industrial

RDS (on)

110 mΩ

Apps

Server power supply units (PSU), 1-phase string inverter solutions, 3-phase string inverter solutions, Microinverter solutions, Motor control

Features

  • 650 V bidirectional e-mode transistor
  • Common-drain configuration
  • Bidirectional blocking capability
  • Low gate charge, low output charge
  • Integrated substrate voltage control
  • Qualfied according to JEDEC
  • Stable RSS(on) across temp. and freq.
  • Replacement of back-to-back switches

Description

  • Compact design
  • Cost effective
  • Low conduction loss
  • Simplified design
  • Short time-to-market

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