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IGI60L1111B1M
  • IGI60L1111B1M

IGI60L1111B1M

Active and preferred

IGI60L1111B1M combines a half-bridge power stage consisting of two CoolGaN™ Transistors 600 V / 110 mΩ (RDS(on) typ.) with an integrated level-shift gate driver and a bootstrap diode in a small 6x8 mm TFLGA-27 package.

Infineon Technologies IGI60L1111B1M Product Info

16 April 2026 0

Parameters

Family

CoolGaN™ Drive HB 600 V G5

Green

RoHS compliant, Halogen free

ID (@25°C) max

7.4 A

IDpuls (@25°C) max

30 A

Package

LGA 6x8

Planned to be available until at least

2035

QG

2.4 nC

Qualification

Industrial

RDS (on) (typ)

110 mΩ

VDS max

600 V

Apps

Power adapters and chargers

Features

  • Integrated level shift gate driver
  • Integrated bootstrap diode
  • PWM input compatible
  • Wide VDD range (10 to 24 V)
  • Turn-ON & OFF dv/dt slew rate control
  • Zero Qrr

Description

  • 4x reduction in components count
  • 2x reduction of footprint on a PCB

    On a system level:
  • Reduced cost
  • Reduced weight
  • Reduced complexity

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