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IGI60F2020A1L
  • IGI60F2020A1L

IGI60F2020A1L

IGI60F2020A1L combines a half-bridge power stage consisting of two 200 mΩ (typ. RDS(on)) / 600 V enhancement mode CoolGaN™ HEMT with dedicated gate drivers in a small 8 x 8 mm QFN-28 package. It is thus ideally suited to support the design of high density AC-DC charger and adapters utilizing the superior switching behavior of CoolGaN™ power switches. Infineon’s CoolGaN™ and related power switches provide a very robust gate structure. When driven by a continuous gate current of a few mA in the “on” state, a minimum on-resistance RDS(on) is always guaranteed, independent of temperature and parameter variations. The driver utilizes on-chip coreless transformer technology (CT) to achieve signal level-shifting to the high-side. Further, CT guarantees robustness even for extremely fast switching transients above 300 V/ns.

Infineon Technologies IGI60F2020A1L Product Info

16 April 2026 0

Parameters

Green

RoHS compliant, Halogen free

ID (@ TA=25°C) max

5.2 A

IDpuls (@25°C) max

14.1 A

QG

1.5 nC

RDS (on) (typ)

200 mΩ

VDS max

600 V

Features

  • Isolated digital input with digital-in, power-out building block
  • Application configurable switching behavior
  • Fast, highly accurate, and stable timing
  • Thermally enhanced 8x8mm QFN-28

Description

  • Easy to drive with 2x digital PWM input
  • Low system BOM
  • Complete configurability of gate path via simple RC interface
  • Allows short dead-time setting to maximize system efficiency 
  • Small package for compact system designs

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