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IDYH25G200C5
  • IDYH25G200C5

IDYH25G200C5

Active and preferred

CoolSiC™ Schottky diode 2000 V, 25 A generation 5 in a TO-247PLUS-4 HCC package enables higher efficiency and design simplification in high DC link systems up to 1500 VDC. The extended 14 mm creepage and 5.4 mm clearance distances of the new TO-247PLUS-4 HCC package offer extra safety in harsh environments. The diode offers first-class thermal performance thanks to the .XT interconnection technology and is highly resistant to humidity. The diode is the perfect fit for the matching CoolSiC™ MOSFET 2000 V portfolio.

Infineon Technologies IDYH25G200C5 Product Info

16 April 2026 0

Parameters

I(FSM) max

193 A

IF max

25 A

IR

0.012 mA

Package

PG-TO247-4-PLUS

Ptot max

468 W

QC

224 nC

Qualification

Industrial

RthJC

0.25 K/W

VF

1.5 V

Apps

EV charging, 3-phase string inverter solutions

Features

  • VRRM = 2000 V
  • IF = 25 A
  • VF = 1.5 V
  • No reverse recovery current
  • No forward recovery
  • High surge current capability
  • Temperature independent switch behavior
  • Low forward voltage
  • Tight forward voltage distribution
  • Specified dv/dt ruggedness
  • .XT interconnection technology

Description

  • High DC-link systems up to 1500 VDC
  • Minimized conduction losses
  • No reverse recovery current
  • High power with half the part count
  • Topology simplification
  • Increased reliability

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