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BSZ15DC02KD H
  • BSZ15DC02KD H

BSZ15DC02KD H

Active and preferred

Complementary power MOSFETs - an n-channel and a p-channel power MOSFET within the same package - are part of Infineon’s famous low voltage OptiMOS™ families, the market leader in high efficiency solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle).

Infineon Technologies BSZ15DC02KD H Product Info

16 April 2026 0

Parameters

Budgetary Price €/1k

0.39

Ciss

315 pF, 270 pF

Coss

114 pF, 110 pF

ID (@25°C) max

3.2 A, 5.1 A

IDpuls max

20 A, -13 A

Mode

Enhancement

Mounting

SMD

Operating Temperature range

-55 °C to 175 °C

Package

PQFN 3.3 x 3.3

Pin Count

8 Pins

Polarity

N+P

Ptot max

2.5 W

QG (typ @4.5V) max

3 nC

RDS (on) (@4.5V) max

55 mΩ, 150 mΩ

RthJA max

60 K/W

RthJC max

8 K/W

Rth

8 K/W

VDS max

20 V, -20 V

VGS(th) range

-1.4 V to -0.7 V, 0.8 V to 1.4 V

Apps

Automotive body control module (BCM), Chassis control & safety, Electric brake booster, Electric power steering (EPS)

Features

  • Complementary P + N channel
  • Enhancement mode
  • Avalanche rated
  • Qualified according to AEC Q101
  • 100% lead-free; RoHS compliant

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