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IAUC120N06S5N015
  • IAUC120N06S5N015

IAUC120N06S5N015

Active and preferred

Infineon Technologies IAUC120N06S5N015 Product Info

16 April 2026 0

Parameters

Country of Assembly (Last BE site, current, subject to change)

Malaysia

Country of Diffusion (Last FE site, current, subject to change)

Germany

ID (@25°C) max

120 A

Launch year

2024

Operating Temperature range

-55 °C to 175 °C

Package

PG-TDSON-8

Planned to be available until at least

2038

Polarity

N

QG (typ @10V)

73.7 nC

QG (typ @10V) max

96 nC

Qualification

Automotive

RDS (on) (@10V) max

1.5 mΩ

Technology

OptiMOS™5

VDS max

60 V

VGS(th)

2.8 V

VGS(th) range

2.2 V to 3.4 V

Features

  • OptiMOS™ 5 power MOSFET
  • N-channel-Enhancement mode-Normal Level
  • AEC qualified
  • MSL1 up to 260°C peak reflow
  • 175°C operating temperature
  • Green product (RoHS compliant)
  • Robust design
  • 100% Avalanche tested
  • PPAP Capable Device

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