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IDWD10G120C5
  • IDWD10G120C5

IDWD10G120C5

Active and preferred

CoolSiC™ Schottky diode 1200 V, 10 A G5 in a TO-247 real 2-pin package, for easy exchange of bipolar Si diodes. The expanded 8.7 mm creepage and clearance distances offer extra safety in high-pollution environments. Combined with a Si IGBT or super-junction MOSFET a CoolSiC™ diode raises efficiency up to 1% compared to next best Si diode alternative. The output power of PFC and DC-DC stages can thus be increased, by 40% or more.

Infineon Technologies IDWD10G120C5 Product Info

16 April 2026 0

Parameters

I(FSM) max

140 A

IF max

35 A

IR

6 A

Package

PG-TO247-2

Ptot max

148 W

QC

57 nC

Qualification

Industrial

RthJC

0.68 K/W

VF

1.4 V

Apps

EV charging, Photovoltaic, Power conversion, Uninterruptible power supplies (UPS), Offline UPS - high frequency transformer

Features

  • No reverse recovery current
  • No forward recovery voltage
  • Temp.-independ. switching behavior
  • Low forward voltage*
  • *even at high operating temperature
  • Tight forward voltage distribution
  • High surge current capability
  • Real two-pin package
  • 8.7 mm creepage distances
  • 8.7 mm clearance distances

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