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IDV08E65D2
  • IDV08E65D2

IDV08E65D2

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Rapid 2 switching 650 V, 8 A emitter controlled power silicon diode in a TO-220 FullPAK package is designed for applications switching between 40 kHz and 100 kHz.

Infineon Technologies IDV08E65D2 Product Info

16 April 2026 0

Parameters

Configuration

Single

I(FSM) max

60 A

IF max

8 A

IF

8 A

IR max

40 µA

Irrm

2.5 A

Mounting

THT

Operating Temperature range

-40 °C to 175 °C

Package

TO-220

Ptot max

27.3 W

Qrr

0.08 µC

RthJC max

5.5 K/W

trr

40 ns

VF max

1.6 V

VF

1.6 V

Voltage Class max

650 V

Features

  • Lowest reverse recovery charge
  • Highest softness-factor
  • Low reverse recovery time (trr)
  • Lowest Irrm
  • Low turn-on losses on boost switch

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