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IDP30C65D2
  • IDP30C65D2

IDP30C65D2

Rapid 2 switching 650 V, 30 A emitter controlled power silicon diodes in common cathode configuration and in a TO-220 package, allowing design optimization for more compact dimensions, easier assembly and consequently lower costs.

Infineon Technologies IDP30C65D2 Product Info

16 April 2026 0

Parameters

Configuration

Common Cathode

I(FSM) max

100 A

IF max

30 A

IF

15 A

IR max

40 µA

Irrm

5.4 A

Mounting

THT

Operating Temperature range

-40 °C to 175 °C

Package

TO-220

Ptot max

92 W

Qrr

0.16 µC

RthJC max

1.63 K/W

trr

42 ns

VF max

2.2 V

VF

1.6 V

Voltage Class max

650 V

Features

  • 1.35 V temperature-stable VF
  • Highest softness-factor for:
  • Ultimate softness
  • Low EMI filtering
  • Lowest Irrm for:
  • Low turn-on losses on boost switch
  • For 18 kHz to 40 kHz applications

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