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IDH04G65C5
  • IDH04G65C5

IDH04G65C5

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The CoolSiC™ Schottky diodes generation 5 650 V, 2 A in a DPAK real2pin package represents our leading edge technology for SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3, is now combined with a new, more compact design and thin wafer technology. The result is a new family of products showing improved efficiency over all load conditions, coming from both the improved thermal characteristics and a lower figure of merit (Q c x V f).

Infineon Technologies IDH04G65C5 Product Info

16 April 2026 0

Parameters

I(FSM) max

38 A

IF max

4 A

IR

0.2 µA

Package

TO220

Ptot max

48 W

QC

7 nC

Qualification

Industrial

RthJC

1.9 K/W

VF

1.5 V

Apps

Medium voltage IBC (48 V)

Features

  • Improved figure of merit (Q c x V f)
  • No reverse recovery charge
  • Soft switching reverse recovery waveform
  • Temperature independent switching behavior
  • High operating temperature (T j max 175°C)
  • Improved surge capability
  • Pb-free lead plating

Description

  • Higher safety margin against overvoltage and complements CoolMOS™ offer
  • Improved efficiency over all load conditions
  • Increased efficiency compared to Silicon Diode alternatives
  • Reduced EMI compared to snappier Silicon diode reverse recovery waveform
  • Highly stable switching performance
  • Reduced cooling requirements
  • Reduced risks of thermal runaway
  • RoHS compliant
  • Very high quality and high volume manufacturing capability

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