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BC856S
  • BC856S

BC856S

NPN Silicon AF Transistor Arrays

Infineon Technologies BC856S Product Info

16 April 2026 0

Parameters

fT

250 MHz

hFE range

200 to 630

ICBO max

15 nA

IC max

2 mA

IC

100 mA

ICM max

200 mA

Mounting

SMT

Package

P-SOT363-6-1

Polarity

PNP (Dual)

Ptot max

250 mW

VCBO max

80 V

VCE(sat) max

0.65 V

VCEO max

65 V

VCE max

5 V

VCE

5 V

VEBO max

5 V

Features

  •  For AF input stages and driver applications
  •  High current gain
  •  Low collector-emitter saturation voltage
  •  Two (galvanic) internal isolated transistor with good matching in one package
  •  BC856S / U, BC857S: For orientation in reel see package information below
  •  Pb-free (RoHS compliant) package
  •  Qualified according AEC Q101

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