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IAUZN10S7N078
  • IAUZN10S7N078

IAUZN10S7N078

Active and preferred

IAUZN10S7N078 is an automotive MOSFET built with Infineon’s leading edge, power semiconductor technology; OptiMOS™ 7 100 V. This product is offered a lead-less 3x3mm2 SMD package. The S3O8 package utilizes a copper clip to offer lower package resistance and inductance as compared to traditional gullwing lead packages. It is designed specifically for the high performance, quality, and robustness needed for demanding automotive applications.

Infineon Technologies IAUZN10S7N078 Product Info

16 April 2026 1

Parameters

Country of Assembly (Last BE site, current, subject to change)

Malaysia

Country of Diffusion (Last FE site, current, subject to change)

Austria, Germany

ID (@25°C) max

60 A

Launch year

2025

Operating Temperature range

-55 °C to 175 °C

Package

PG-TSDSON-8

Planned to be available until at least

2040

Polarity

N

QG (typ @10V) max

28.9 nC

QG (typ @10V)

22.2 nC

Qualification

Automotive

RDS (on) (@10V) max

7.8 mΩ

Technology

OptiMOS™7

VDS max

100 V

VGS(th) range

2.3 V to 3.2 V

VGS(th)

2.8 V

Apps

Auxiliary motor control 48 V, Automotive LED front single light functions, Automotive braking solutions, Electric power steering (EPS), Automotive electric pumps & fans 48 V

Features

  • Industry’s best on-resistance, RDS(on)
  • Fast switching times (turn on/off)
  • ID current 50% better than prior gen.
  • Tight threshold voltage, VGS(th), range
  • Small 3x3mm2 SMD package
  • High avalanche current capability
  • High SOA ruggedness
  • Extended qualification beyond AEC-Q101
  • Enhanced electrical testing
  • Package is listed with JEDEC

Description

  • Minimized conduction losses
  • Superior switching performance
  • Small footprint; could save PCB area
  • Helps achieve high power density
  • Well-suited for parallel placement
  • Quality and robustness for automotive
  • Potential for second source supplier

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